apt25gt120br(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci? ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1.5ma) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts a na symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt25gt120br(g) 1200 30 54 25 75 75a @ 1200v 347 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. g c e min typ max 1200 4.5 5.5 6.5 2.7 3.2 3.7 3.9 100 tbd 120 1200v apt25gt120br APT25GT120BRG* apt25gt120sr apt25gt120srg* *g denotes rohs compliant, pb free terminal finish. the thunderbolt igbt ? is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? offers superior ruggedness and ultrafast switching speed. ? low forward voltage drop ? high freq. switching to 50khz ? low tail current ? ultra low leakage current ? rbsoa and scsoa rated thunderbolt igbt ? to-247 d 3 pak microsemi website - http://www.microsemi.com 052-6268 rev c 11-2007
apt25gt120br(g) thermal and mechanical characteristics unit c/w gm min typ max .36 n/a 5.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 25a t j = 150c, r g = 5 , v ge = 15v, l = 100h,v ce = 1200v inductive switching (25c) v cc = 800v v ge = 15v i c = 25a r g = 5 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 25a r g = 5 t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 1845 170 110 10.0 170 20 100 75 14 27 150 36 930 1860 720 14 27 175 45 925 3265 965 unit pf v nc a ns j ns j 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide dio de. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) microsemi reserves the right to change, without notice, the speci cations and information contained herein. 052-6268 rev c 11-2007
apt25gt120br(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) i c = 25a t j = 25c 250s pulse test<0.5 % duty cycle 80 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0 6 5 4 3 2 1 0 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0 2 4 6 8 0 5 10 15 20 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 160 180 200 6 8 10 12 14 16 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 100 80 60 40 20 0 16 14 12 10 8 6 4 2 0 6 5 4 3 2 1 0 80 70 60 50 40 30 20 10 0 t j = 125c t j = 25c t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c v ge = 15v v ce = 960v v ce = 600v v ce = 240v v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temperature i c = 12.5a i c = 25a i c = 50a i c = 12.5a i c = 25a i c = 50a t j = -55c 13v 11v 10v 9v 12v 8v 7v 15v t j = -55c 052-6268 rev c 11-2007
apt25gt120br(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 5 l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 800v v ge = +15v r g = 5 v ce = 800v t j = 25c , or 125c r g = 5 l = 100h 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 10,000 8,000 6,000 4,000 2,000 0 18,000 16,000 14,000 12,000 10,000 8,000 6,000 4,000 2,000 0 200 180 160 140 120 100 80 60 40 20 0 50 45 40 35 30 25 20 15 10 5 0 2500 2000 1500 1000 500 0 9,000 8,000 7,000 6,000 5,000 4,000 3,000 2,000 1,000 0 v ge = 15v v ce = 800v v ge = +15v r g = 5 v ce = 800v v ge = +15v r g = 5 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 50 0 25 50 75 100 125 r g = 5 , l = 100 h, v ce = 800v t j = 125c t j = 25c t j = 125c t j = 25c r g = 5 , l = 100 h, v ce = 800v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 50a e off, 50a e on2, 25a e off, 25a e on2, 12.5a e off, 12.5a v ce = 800v v ge = +15v t j = 125c e on2, 50a e off, 50a e on2, 25a e off, 25a e on2, 12.5a e off, 12.5a 052-6268 rev c 11-2007
apt25gt120br(g) typical performance curves 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 3,000 1,000 500 100 50 10 80 70 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400 figure 19b, transient thermal impedance model 5 10 15 20 25 30 35 40 45 50 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 800v r g = 5 140 50 10 5 1 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c oes c res c ies 0.178 0.182 0.0101 0.136 power (watts) rc model junction temp. ( c) case temperature. ( c) peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 052-6268 rev c 11-2007
apt25gt120br(g) figure 22, turn-on switching waveforms and de? nitions figure 23, turn-off switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circuit v cc apt40dq120 d 3 pak package outline to-247 (b) package outline 100% sn plated 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) revised 8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) revised 4/18/95 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. us and foreign patents pending. all rights res erved. 052-6268 rev c 11-2007 collector emitter collector emitter
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